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FQD3N60TM

MOSFET 600V N-Ch QFET

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SeekIC No. : 00160770 Detail

FQD3N60TM: MOSFET 600V N-Ch QFET

FQD3N60TM Data Sheet

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Part Number:
FQD3N60TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 3.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : DPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 2.4 A
Resistance Drain-Source RDS (on) : 3.6 Ohms


Parameters:

Technical/Catalog InformationFQD3N60TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C2.4A
Rds On (Max) @ Id, Vgs3.6 Ohm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds 450pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD3N60TM
FQD3N60TM



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