FQD3N60

Features: • 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V• Low gate charge ( typical 10 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese N-Channel enhancement mode power FQD3N60field effect transistors are...

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SeekIC No. : 004343206 Detail

FQD3N60: Features: • 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V• Low gate charge ( typical 10 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• Improved d...

floor Price/Ceiling Price

Part Number:
FQD3N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Description

These N-Channel enhancement mode power FQD3N60 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQD3N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD3N60 is well suited for high efficiency switch mode power supply.




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