Features: • 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V• Low gate charge ( typical 10 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilityDescriptionThese N-Channel enhancement mode power FQD3N60field effect transistors are...
FQD3N60: Features: • 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V• Low gate charge ( typical 10 nC)• Low Crss ( typical 5.5 pF)• Fast switching• 100% avalanche tested• Improved d...
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These N-Channel enhancement mode power FQD3N60 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQD3N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD3N60 is well suited for high efficiency switch mode power supply.