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FQD3N50CTF: MOSFET 500V N-Channel Advancd QFET C-seris

FQD3N50CTF Data Sheet

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Part Number:: FQD3N50CTF
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Negotiable

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15 Days

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Upload time: 2024/11/24

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MOSFET 60V N-Channel QFET Logic Level

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	500 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	2.5 A
Resistance Drain-Source RDS (on) :	2.1 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Continuous Drain Current : 2.5 A
Resistance Drain-Source RDS (on) : 2.1 Ohms

Parameters:

Technical/Catalog Information	FQD3N50CTF
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	2.5 Ohm @ 1.25A, 10V
Input Capacitance (Ciss) @ Vds	365pF @ 25V
Power - Max	35W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	13nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD3N50CTF FQD3N50CTF

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