Position: Home  > All Categories> Integrated Circuits (ICs) > FQD3N25

FQD3N25

Features: • 2.4A, 250V, RDS(on) = 2.2Ω @VGS = 10 V• Low gate charge ( typical 4.0 nC)• Low Crss ( typical 4.7 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD3N25 / FQU3N25 Units VDSS Drai...

product image

FQD3N25 Picture
See larger image
SeekIC No. : 004343204 Detail

FQD3N25: Features: • 2.4A, 250V, RDS(on) = 2.2Ω @VGS = 10 V• Low gate charge ( typical 4.0 nC)• Low Crss ( typical 4.7 pF)• Fast switching• 100% avalanche tested• Im...

FQD3N25 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQD3N25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 2.4A, 250V, RDS(on) = 2.2Ω @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical  4.7 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter FQD3N25 / FQU3N25 Units
VDSS Drain-Source Voltage 250 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 2.4 A
1.5 A
IDM Drain Current - Pulsed (Note 1) 9.6 A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 40 mJ
IAR Avalanche Current (Note 1) 2.4 A
EAR Repetitive Avalanche Energy (Note 1) 3.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TA = 25) * 2.5 W
Power Dissipation (TC = 25)
- Derate above 25		 30 W
0.24 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150  
TL Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds		 300  



Description

    These N-Channel enhancement mode power field effect transistors of FQD3N25 are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology FQD3N25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD3N25 is well suited for high efficiency switching DC/DC converters, switch mode power supply.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Switches
US32DMRJ
HBGQ22P-11ET
Prototyping Products
AVT4168
DE1
Integrated Circuits (ICs)
TA8435H
1MB12-140
RF and RFID
X3C26P1-30S
1P620S
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Isolators
HCPL062N
HCPL316J
View more