FQD2N80TM_WS Selling Leads, Price trend , Fairchild Semiconductor, FQD2N80TM_WS DataSheet download, circuit diagram from SeekIC.com

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FQD2N80TM_WS: MOSFET 800V N-Channel QFET

FQD2N80TM_WS Data Sheet

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Part Number:: FQD2N80TM_WS
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	1.8 A
Resistance Drain-Source RDS (on) :	6.3 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	DPAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : DPAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 1.8 A
Resistance Drain-Source RDS (on) : 6.3 Ohms

Parameters:

Technical/Catalog Information	FQD2N80TM_WS
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	1.8A
Rds On (Max) @ Id, Vgs	6.3 Ohm @ 900mA, 10V
Input Capacitance (Ciss) @ Vds	550pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD2N80TM_WS FQD2N80TM_WS

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