Features: • 19.6A, 80V, RDS(on) = 0.06Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 50 pF)•Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD24N08 /FQU24N08 Units VDSS Drain...
FQD24N08: Features: • 19.6A, 80V, RDS(on) = 0.06Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 50 pF)•Fast switching• 100% avalanche tested• Impr...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: 17.2A, 60V, RDS(on)= 0.06 @ VGS= 10VLow gate charge ( typical 9.5 nC)Low Crss ( typical ...
Symbol | Parameter | FQD24N08 /FQU24N08 | Units |
VDSS | Drain-Source Voltage | 80 | V |
ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
19.6 | A |
12.4 | A | ||
IDM | Drain Current - Pulsed (Note 1) | 78.4 | A |
VGSS | Gate-Source Voltage | ±25 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 230 | mJ |
IAR | Avalanche Current (Note 1) | 19.6 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 5.0 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
PD | Power Dissipation (TA = 25) * | 2.5 | W |
Power Dissipation (TC = 25) - Derate above 25 |
50 | W | |
0.4 | W/ | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
These N-Channel enhancement mode power FQD24N08 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQD24N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD24N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.