FQD1N80TM, US $ .26-.39 , Fairchild Semiconductor, FQD1N80TM DataSheet download, circuit diagram from SeekIC.com

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FQD1N80TM: MOSFET Power MOSFET

FQD1N80TM Data Sheet

US $ .26~.39 / Piece | Get Latest Price

Part Number:: FQD1N80TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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US $.27 - .4 / Piece

MOSFET N-CH/200V/10A/QFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	1 A
Resistance Drain-Source RDS (on) :	20 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-252	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 20 Ohms

Parameters:

Technical/Catalog Information	FQD1N80TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	1A
Rds On (Max) @ Id, Vgs	20 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	195pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7.2nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD1N80TM FQD1N80TM

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FQD1N80TM

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