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FQD1N60TF

MOSFET 600V N-Channel QFET

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SeekIC No. : 00163148 Detail

FQD1N60TF: MOSFET 600V N-Channel QFET

FQD1N60TF Data Sheet

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Part Number:
FQD1N60TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 11.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-252
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 11.5 Ohms


Parameters:

Technical/Catalog InformationFQD1N60TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C1A
Rds On (Max) @ Id, Vgs11.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 150pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD1N60TF
FQD1N60TF



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