Features: • -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 V• Low gate charge ( typical 21 nC)• Low Crss ( typical 65 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQD12P10 / FQU12P10 Units ...
FQD12P10: Features: • -9.4A, -100V, RDS(on) = 0.29 @VGS = -10 V• Low gate charge ( typical 21 nC)• Low Crss ( typical 65 pF)• Fast switching• 100% avalanche tested• Improve...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
FQD12P10 / FQU12P10 |
Units | |
VDSS |
Drain-Source Voltage |
-100 |
V | |
ID |
Drain Current |
- Continuous (TC =25°C) |
-9.6 |
A |
|
- Continuous (TC = 100°C) |
-6.0 |
A | |
IDM |
Drain Current Pulsed (Note 1) |
-37.5 |
A | |
VGSS |
Gate-Source Voltage |
± 30 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
370 |
mJ | |
IAR |
Avalanche Current (Note 1) |
-9.4 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
5.0 |
mJ | |
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
-6.0 |
V/ns | |
PD |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
Power Dissipation (TC = 25°C) |
50 |
W | ||
- Derate above 25°C |
0.4 |
W/°C | ||
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These P-Channel enhancement mode power FQD12P10 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQD12P10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.