FQD12N20LTM

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-252
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.28 Ohms


Pinout




Description

The FQD12N20LTM is N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

Features of the FQD12N20LTM are:(1)9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V;(2)low gate charge (typical 16 nC);(3)low crss ( typical 17 pF);(4)fast switching;(5)100% avalanche tested;(6)improved dv/dt capability;(7)low level gate drive requirement allowing direct opration from logic drivers.

The absolute maximum ratings of the FQD12N20LTM can be summarized as:(1):the symbol is VDSS,the parameter is drain-source voltage,the value is 200,the unit is V;(2):the symbol is ID,the parameter is drain current - continuous (TC = 25),the value is 9.0,the unit is A;(3):the symbol is ID,the parameter is drain current - continuous (TC = 100),the value is 5.7,the unit is A;(4):the symbol is IDM,the parameter is drain current - pulsed,the value is 36,the unit is A;(5):the symbol is VGSS,the parameter is gate-source voltage,the value is ±20,the unit is V;(6):the symbol is EAS,the parameter is single pulsed avalanche energy,the value is 210,the unit is mJ;(7):the symbol is IAR,the parameter is avalanche current,the value is 9.0,the unit is A;(8):the symbol is EAR,the parameter is repetitive avalanche energy,the value is 5.5,the unit is mJ;(9):the symbol is dv/dt,the parameter is peak diode recovery dv/dt,the value is 5.5,the unit is V/ns;(10):the symbol is PD,the parameter is power dissipation (TA = 25),the value is 2.5,the unit is W;(11):the symbol is PD,the parameter is power dissipation (TC = 25),the value is 55,the unit is W;(12):the symbol is PD,the parameter is power dissipation derate above 25,the value is 0.44,the unit is W/;(13):the symbol is TJ,TSTG,the parameter is operating and storage temperature range,the value is -55 to +150,the unit is ;(14):the symbol is TL,the parameter is maximum lead temperature for soldering purposes,1/8" from case for 5 seconds,the value is 300,the unit is .

Parameters:

Technical/Catalog Information	FQD12N20LTM
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	280 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	1080pF @ 25V
Power - Max	2.5W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	21nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQD12N20LTM FQD12N20LTM FQD12N20LTMDKR ND FQD12N20LTMDKRND FQD12N20LTMDKR