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FQD11P06TF

MOSFET TO-250 DPAK P-CH 60V

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SeekIC No. : 00160878 Detail

FQD11P06TF: MOSFET TO-250 DPAK P-CH 60V

FQD11P06TF Data Sheet

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Part Number:
FQD11P06TF
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 9.4 A
Resistance Drain-Source RDS (on) : 0.185 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Resistance Drain-Source RDS (on) : 0.185 Ohms
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : - 9.4 A


Parameters:

Technical/Catalog InformationFQD11P06TF
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C9.4A
Rds On (Max) @ Id, Vgs185 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds 550pF @ 25V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQD11P06TF
FQD11P06TF



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