Features: • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 24 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB9N50C/FQI9N50C Units VDSS D...
FQB9N50C: Features: • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 24 pF)• Fast switching• 100% avalanche tested• Impr...
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Symbol | Parameter |
FQB9N50C/FQI9N50C |
Units |
VDSS | Drain-Source Voltage |
500 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
9 |
A |
5.4 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
36 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
360 |
mJ |
IAR | Avalanche Current (Note 1) |
9 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
13.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
135 |
W |
1.07 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB9N50C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB9N50C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB9N50C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.