FQB9N50C

Features: • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 24 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB9N50C/FQI9N50C Units VDSS D...

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SeekIC No. : 004343168 Detail

FQB9N50C: Features: • 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 24 pF)• Fast switching• 100% avalanche tested• Impr...

floor Price/Ceiling Price

Part Number:
FQB9N50C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

• 9 A, 500V, RDS(on) = 0.8 Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter
FQB9N50C/FQI9N50C
Units
VDSS Drain-Source Voltage
500
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
9
A
5.4
A
IDM Drain Current - Pulsed (Note 1)
36
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
360
mJ
IAR Avalanche Current (Note 1)
9
A
EAR Repetitive Avalanche Energy (Note 1)
13.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
135
W
1.07
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB9N50C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB9N50C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB9N50C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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