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FQB7N10TM

MOSFET 100V N-Channel QFET

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SeekIC No. : 00162906 Detail

FQB7N10TM: MOSFET 100V N-Channel QFET

FQB7N10TM Data Sheet

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Part Number:
FQB7N10TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 7.3 A
Resistance Drain-Source RDS (on) : 0.35 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 7.3 A
Package / Case : TO-263
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.35 Ohms


Parameters:

Technical/Catalog InformationFQB7N10TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C7.3A
Rds On (Max) @ Id, Vgs350 mOhm @ 3.65A, 10V
Input Capacitance (Ciss) @ Vds 250pF @ 25V
Power - Max3.75W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs7.5nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB7N10TM
FQB7N10TM



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