FQB55N10TM, US $ .68-1.11 , Fairchild Semiconductor, FQB55N10TM DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00146579 Detail

FQB55N10TM: MOSFET 100V N-Channel QFET

FQB55N10TM Data Sheet

US $ .68~1.11 / Piece | Get Latest Price

Part Number:: FQB55N10TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/6/9

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Recent History
What is this?

FQB5P20 evaluate
Features: • -4.8A, -200V, RDS(on) = 1.4Ω @VGS = -10 V• Low gate charge ( typical...
FQB5P10 evaluate
Features: • -4.5A, -100V, RDS(on) = 1.05Ω @VGS = -10 V• Low gate charge ( typica...
FQB5N90 evaluate
Features: • 5.4A, 900V, RDS(on) = 2.3 Ω @ VGS = 10 V• Low gate charge ( typical ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	55 A
Resistance Drain-Source RDS (on) :	0.026 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Package / Case : D2PAK
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 0.026 Ohms

Parameters:

Technical/Catalog Information	FQB55N10TM
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	26 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds	2730pF @ 25V
Power - Max	3.75W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	98nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB55N10TM FQB55N10TM FQB55N10TMCT ND FQB55N10TMCTND FQB55N10TMCT

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FQB55N10TM

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