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FQB55N06TM

MOSFET 60V N-Channel QFET

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SeekIC No. : 00162505 Detail

FQB55N06TM: MOSFET 60V N-Channel QFET

FQB55N06TM Data Sheet

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Part Number:
FQB55N06TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 0.02 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 0.02 Ohms


Parameters:

Technical/Catalog InformationFQB55N06TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs20 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds 1690pF @ 25V
Power - Max3.75W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs46nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB55N06TM
FQB55N06TM



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