Features: • -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB4P40 / FQI4P40 Units VDSS...
FQB4P40: Features: • -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V• Low gate charge ( typical 18 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• I...
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Symbol | Parameter |
FQB4P40 / FQI4P40 |
Units |
VDSS | Drain-Source Voltage |
-400 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
-3.5 |
A |
-2.2 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
-14 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
260 |
mJ |
IAR | Avalanche Current (Note 1) |
-3.5 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
8.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
-4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
85 |
W | |
0.68 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These P-Channel enhancement mode power field effect transistors of FQB4P40 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB4P40 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB4P40 is well suited for electronic lamp ballast based on complimentary half bridge.