FQB4N90TM Selling Leads, Price trend , Fairchild Semiconductor, FQB4N90TM DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00163110 Detail

FQB4N90TM: MOSFET 900V N-Channel QFET

FQB4N90TM Data Sheet

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Part Number:: FQB4N90TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	900 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	4.2 A
Resistance Drain-Source RDS (on) :	3.3 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 4.2 A
Resistance Drain-Source RDS (on) : 3.3 Ohms

Parameters:

Technical/Catalog Information	FQB4N90TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25° C	4.2A
Rds On (Max) @ Id, Vgs	3.3 Ohm @ 2.1A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 25V
Power - Max	3.13W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB4N90TM FQB4N90TM

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FQB4N90TM

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