FQB4N80TM, US $ .52-.85 , Fairchild Semiconductor, FQB4N80TM DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00146334 Detail

FQB4N80TM: MOSFET 800V N-Channel QFET

FQB4N80TM Data Sheet

US $ .52~.85 / Piece | Get Latest Price

Part Number:: FQB4N80TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	3.9 A
Resistance Drain-Source RDS (on) :	3.6 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 3.6 Ohms
Continuous Drain Current : 3.9 A

Parameters:

Technical/Catalog Information	FQB4N80TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	3.9A
Rds On (Max) @ Id, Vgs	3.6 Ohm @ 1.95A, 10V
Input Capacitance (Ciss) @ Vds	880pF @ 25V
Power - Max	3.13W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	25nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB4N80TM FQB4N80TM

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FQB4N80TM

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