Features: • 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 8.0 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB4N60 / FQI4N60 Units VDSS ...
FQB4N60: Features: • 4.4A, 600V, RDS(on) = 2.2Ω @VGS = 10 V• Low gate charge ( typical 15 nC)• Low Crss ( typical 8.0 pF)• Fast switching• 100% avalanche tested• Imp...
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Symbol | Parameter |
FQB4N60 / FQI4N60 |
Units |
VDSS | Drain-Source Voltage |
600 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
4.4 |
A |
2.8 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
17.6 |
A |
VGSS | Gate-Source Voltage |
±30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
260 |
mJ |
IAR | Avalanche Current (Note 1) |
4.4 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
10.6 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
106 |
W | |
0.6 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB4N60 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB4N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB4N60 is well suited for high efficiency switch mode power supply.