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FQB47P06

Features: • -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V• Low gate charge ( typical 84 nC)• Low Crss ( typical 320 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol...

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SeekIC No. : 004343123 Detail

FQB47P06: Features: • -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V• Low gate charge ( typical 84 nC)• Low Crss ( typical 320 pF)• Fast switching• 100% avalanche tested• ...

FQB47P06 Data Sheet

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Part Number:
FQB47P06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• -47A, -60V, RDS(on) = 0.026Ω @VGS = -10 V
• Low gate charge ( typical 84 nC)
• Low Crss ( typical 320 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol Parameter
FQB47P06 / FQI47P06
Units
VDSS Drain-Source Voltage
-60
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-47
A
-33.2
A
IDM Drain Current - Pulsed (Note 1)
-188
A
VGSS Gate-Source Voltage
±25
V
EAS Single Pulsed Avalanche Energy (Note 2)
820
mJ
IAR Avalanche Current (Note 1)
-47
A
EAR Repetitive Avalanche Energy (Note 1)
16
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-7.0
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
160
W
1.06
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These P-Channel enhancement mode power FQB47P06 field effect transistors are produced using Fairchild's proprietary,  planar stripe, DMOS technology.

This advanced technology FQB47P06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQB47P06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.




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