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FQB3P20

Features: • -2.8A, -200V, RDS(on) = 2.7Ω @VGS = -10 V• Low gate charge ( typical 6.0 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB3P20 / FQI3P20 Units VD...

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SeekIC No. : 004343118 Detail

FQB3P20: Features: • -2.8A, -200V, RDS(on) = 2.7Ω @VGS = -10 V• Low gate charge ( typical 6.0 nC)• Low Crss ( typical 7.5 pF)• Fast switching• 100% avalanche tested•...

FQB3P20 Data Sheet

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Part Number:
FQB3P20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• -2.8A, -200V, RDS(on) = 2.7Ω @VGS = -10 V
• Low gate charge ( typical 6.0 nC)
• Low Crss ( typical 7.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB3P20 / FQI3P20
Units
VDSS Drain-Source Voltage
-200
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-2.8
A
-1.77
A
IDM Drain Current - Pulsed (Note 1)
-11.2
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
150
mJ
IAR Avalanche Current (Note 1)
-2.8
A
EAR Repetitive Avalanche Energy (Note 1)
5.2
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-5.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
52
W
0.42
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These P-Channel enhancement mode power FQB3P20 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB3P20 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB3P20 is well suited for high efficiency switching DC/DC converters.




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