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FQB3N25TM

MOSFET N-CH/250V/2.8A/2.2OHM

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SeekIC No. : 00161059 Detail

FQB3N25TM: MOSFET N-CH/250V/2.8A/2.2OHM

FQB3N25TM Data Sheet

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Part Number:
FQB3N25TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2.8 A
Resistance Drain-Source RDS (on) : 2.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Continuous Drain Current : 2.8 A
Resistance Drain-Source RDS (on) : 2.2 Ohms


Parameters:

Technical/Catalog InformationFQB3N25TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C2.8A
Rds On (Max) @ Id, Vgs2.2 Ohm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds 170pF @ 25V
Power - Max3.13W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5.2nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB3N25TM
FQB3N25TM



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