Position: Home  > All Categories> Integrated Circuits (ICs) > FQB34P10

FQB34P10

Features: ·-33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V· Low gate charge ( typical 85 nC)· Low Crss ( typical 170 pF)· Fast switching· 100% avalanche tested· Improved dv/dt capability·175°C maximum junction temperature ratingSpecifications Symbol Parameter FQB34P10 / FQI34P10 Uni...

product image

FQB34P10 Picture
See larger image
SeekIC No. : 004343113 Detail

FQB34P10: Features: ·-33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V· Low gate charge ( typical 85 nC)· Low Crss ( typical 170 pF)· Fast switching· 100% avalanche tested· Improved dv/dt capability·175°C max...

FQB34P10 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQB34P10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·-33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
· Low gate charge ( typical 85 nC)
· Low Crss ( typical 170 pF)
· Fast switching
· 100% avalanche tested
· Improved dv/dt capability
·175°C maximum junction temperature rating


Specifications

Symbol Parameter
FQB34P10 / FQI34P10
Units
VDSS Drain-Source Voltage
-100
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-33.5
A
-23.5
A
IDM Drain Current - Pulsed (Note 1)
-134
A
VGSS Gate-Source Voltage
±25
V
EAS Single Pulsed Avalanche Energy (Note 2)
2200
mJ
IAR Avalanche Current (Note 1)
-33.5
A
EAR Repetitive Avalanche Energy (Note 1)
15.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-6.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
155
W
1.03
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These  P-Channel  enhancement  mode  power FQB34P10  field  effect transistors  are  produced  using  Fairchild's  proprietary, planar stripe, DMOS technology.

This advanced technology FQB34P10 has been especially tailored to minimize  on-state  resistance,  provide  superior  switching performance,  and  withstand  high  energy  pulse  in  the avalanche and commutation mode. FQB34P10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires
821-0814-a
415-0100-150
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Prototyping Products
AVT4168
DE1
Transformers
TM-09210
BV222-1-00992
View more