Features: • 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V• Low gate charge ( typical 82.5 nC)• Low Crss ( typical 185 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB32N20C / FQI32N20C Units ...
FQB32N20C: Features: • 28A, 200V, RDS(on) = 0.082Ω @VGS = 10 V• Low gate charge ( typical 82.5 nC)• Low Crss ( typical 185 pF)• Fast switching• 100% avalanche tested• ...
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Symbol | Parameter |
FQB32N20C / FQI32N20C |
Units |
VDSS | Drain-Source Voltage |
200 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
28.0 |
A |
17.8 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
112 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
955 |
mJ |
IAR | Avalanche Current (Note 1) |
28.0 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
15.6 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
PD | Power Dissipation (TC = 25°C) - Derate above 25°C |
3.13 |
W |
156 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB32N20C field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology FQB32N20C has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. FQB32N20C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballastsbased on half bridge topology.