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FQB32N12V2

Features: • 32A, 120V, RDS(on) = 0.05Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 70 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB32N12V2/FQI32N12V2 Units VDS...

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SeekIC No. : 004343108 Detail

FQB32N12V2: Features: • 32A, 120V, RDS(on) = 0.05Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 70 pF)• Fast switching• 100% avalanche tested• Impr...

FQB32N12V2 Data Sheet

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Part Number:
FQB32N12V2
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 32A, 120V, RDS(on) = 0.05Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 70 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB32N12V2/FQI32N12V2
Units
VDSS Drain-Source Voltage
120
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
32
A
23
A
IDM Drain Current - Pulsed (Note 1)
128
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
469
mJ
IAR Avalanche Current (Note 1)
32
A
EAR Repetitive Avalanche Energy (Note 1)
15
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
150
W
1
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB32N12V2 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
 
This advanced technology FQB32N12V2 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB32N12V2 is well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required.




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