Position: Home  > All Categories> Integrated Circuits (ICs) > FQB2P25

FQB2P25

Features: • -2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V• Low gate charge ( typical 6.5 nC)• Low Crss ( typical 6.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB2P25 / FQI2P25 Units VD...

product image

FQB2P25 Picture
See larger image
SeekIC No. : 004343104 Detail

FQB2P25: Features: • -2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V• Low gate charge ( typical 6.5 nC)• Low Crss ( typical 6.5 pF)• Fast switching• 100% avalanche tested•...

FQB2P25 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQB2P25
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• -2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V
• Low gate charge ( typical 6.5 nC)
• Low Crss ( typical 6.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB2P25 / FQI2P25
Units
VDSS Drain-Source Voltage
-250
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-2.3
A
-1.45
A
IDM Drain Current - Pulsed (Note 1)
-9.2
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
120
mJ
IAR Avalanche Current (Note 1)
-2.3
A
EAR Repetitive Avalanche Energy (Note 1)
5.2
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-5.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
52
W
0.42
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These P-Channel enhancement mode power FQB2P25 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB2P25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB2P25 is well suited for high efficiency switching DC/DC converters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Cables, Wires
821-0814-a
415-0100-150
Circuit Protection
A50QS75-4Y
F-17*77
Tools
TCP202
G084SN05 V.3
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Line Protection, Backups
BX0023
A20B-1008-0550
View more