FQB2N60 Selling Leads, Price trend, FQB2N60 DataSheet download, circuit diagram from SeekIC.com

Features: • 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V• Low gate charge ( typical 9.0 nC)• Low Crss ( typical 5.0 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB2N60 / FQI2N60 Units VDSS ...

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SeekIC No. : 004343101 Detail

FQB2N60: Features: • 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V• Low gate charge ( typical 9.0 nC)• Low Crss ( typical 5.0 pF)• Fast switching• 100% avalanche tested• Im...

FQB2N60 Data Sheet

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Part Number:: FQB2N60
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/24

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What is this?

FQB20N06 evaluate
Features: • 20A, 60V, RDS(on) = 0.06Ω @VGS = 10 V• Low gate charge ( typical 11....
FQB20N06L evaluate
Features: • 21A, 60V, RDS(on) = 0.055Ω @VGS = 10 V• Low gate charge ( typical 9....
FQB20N06LTM evaluate
MOSFET 60V N-Channel QFET Logic Level

Product Details

Description

Features:

• 2.4A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Specifications

Symbol	Parameter	FQB2N60 / FQI2N60	Units
VDSS	Drain-Source Voltage	600	V
ID	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	2.4	A
ID		1.5	A
IDM	Drain Current - Pulsed (Note 1)	9.6	A
VGSS	Gate-Source Voltage	±30	V
EAS	Single Pulsed Avalanche Energy (Note 2)	140	mJ
IAR	Avalanche Current (Note 1)	2.4	A
EAR	Repetitive Avalanche Energy (Note 1)	6.4	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	4.5	V/ns
PD	Power Dissipation (TA = 25°C) *	3.13	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	64	W
	Power Dissipation (TC = 25°C) - Derate above 25°C	0.51	W/°C
TJ, TSTG	Operating and Storage Temperature Range	-55to+150	°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

Description

These N-Channel enhancement mode power FQB2N60 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB2N60 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB2N60 is well suited for high efficiency switch mode power supply.

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FQB2N60

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