Features: • 28A, 150V, RDS(on) = 0.09 @VGS = 10 V• Low gate charge ( typical 40 nC)• Low Crss ( typical 50 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol Pa...
FQB28N15: Features: • 28A, 150V, RDS(on) = 0.09 @VGS = 10 V• Low gate charge ( typical 40 nC)• Low Crss ( typical 50 pF)• Fast switching• 100% avalanche tested• Improved dv...
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Symbol |
Parameter |
FQB28N15 / FQI28N15 |
Units | |
VDSS |
Drain-Source Voltage |
150 |
V | |
ID |
Drain Current |
- Continuous (TC =25°C) |
28 |
A |
- Continuous (TC = 100°C) |
19.8 |
A | ||
IDM |
Drain Current Pulsed (Note 1) |
112 |
A | |
VGSS |
Gate-Source Voltage |
±25 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
300 |
mJ | |
IAR |
Avalanche Current (Note 1) |
28 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
16..8 |
mJ | |
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD |
Power Dissipation (TA = 25°C) |
3.75 |
W | |
Power Dissipation (TC = 25°C) |
168 |
W | ||
- Derate above 25°C |
1.12 |
W/°C | ||
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB28N15 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation modes. FQB28N15 is well suited for low voltage applications such as audio amplifiers, high efficiency switching for DC/DC converte