MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V
FQB22P10TM_F085: MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 100 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 22 A | ||
Resistance Drain-Source RDS (on) : | 0.125 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Product | Product status | Eco Status | Pricing* | Package type | Leads | Packing method | Package Drawing | Package Marking Convention** |
---|---|---|---|---|---|---|---|---|
FQB22P10TM_F085 | Full Production | RoHS Compliant | $1.10 | TO-263(D2PAK) | 2 | TAPE REEL | TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: FQB Line 3: 22P10 |
* Fairchild 1,000 piece Budgetary Pricing |
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
Package marking information for product FQB22P10TM_F085 is available. Click here for more information . |
These P-Channel enhancement mode power FQB22P10TM_F085 field effecttransistors are produced using Fairchild?s proprietary,planar stripe, DMOS technology.
This advanced technology FQB22P10TM_F085 has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. FQB22P10TM_F085 is wellsuited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol.
Technical/Catalog Information | FQB22P10TM_F085 |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 22A |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 11A, 10V |
Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
Power - Max | 3.75W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 50nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQB22P10TM_F085 FQB22P10TM_F085 FQB22P10TM_F085CT ND FQB22P10TM_F085CTND FQB22P10TM_F085CT |