FQB22P10TM_F085

MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V

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SeekIC No. : 00146897 Detail

FQB22P10TM_F085: MOSFET P-Chan, -100V, -22A 0.125HM@VGS=-10V

floor Price/Ceiling Price

US $ .72~1.01 / Piece | Get Latest Price
Part Number:
FQB22P10TM_F085
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.01
  • $.9
  • $.81
  • $.72
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.125 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 22 A
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 0.125 Ohms


Specifications

      

ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
FQB22P10TM_F085Full ProductionRoHS Compliant$1.10TO-263(D2PAK)2TAPE REEL TBDLine 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K Line 2: FQB Line 3: 22P10
* Fairchild 1,000 piece Budgetary Pricing
** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product FQB22P10TM_F085 is available. Click here for more information .



Description

These P-Channel enhancement mode power FQB22P10TM_F085 field effecttransistors are produced using Fairchild?s proprietary,planar stripe, DMOS technology.

This advanced technology FQB22P10TM_F085 has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. FQB22P10TM_F085 is wellsuited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontrol.




Parameters:

Technical/Catalog InformationFQB22P10TM_F085
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs125 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max3.75W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB22P10TM_F085
FQB22P10TM_F085
FQB22P10TM_F085CT ND
FQB22P10TM_F085CTND
FQB22P10TM_F085CT



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