MOSFET 500V P-Channel QFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 1.5 A | ||
Resistance Drain-Source RDS (on) : | 8 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Reel |
Technical/Catalog Information | FQB1P50TM |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 1.5A |
Rds On (Max) @ Id, Vgs | 10.5 Ohm @ 750mA, 10V |
Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
Power - Max | 3.13W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 14nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FQB1P50TM FQB1P50TM |