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FQB1P50

Features: • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V• Low gate charge ( typical 11 nC)• Low Crss ( typical 6.0 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB1P50 / FQI1P50 Units VD...

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SeekIC No. : 004343095 Detail

FQB1P50: Features: • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V• Low gate charge ( typical 11 nC)• Low Crss ( typical 6.0 pF)• Fast switching• 100% avalanche tested•...

FQB1P50 Data Sheet

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Part Number:
FQB1P50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V
• Low gate charge ( typical 11 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB1P50 / FQI1P50
Units
VDSS Drain-Source Voltage
-500
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
-1.5
A
-0.95
A
IDM Drain Current - Pulsed (Note 1)
-6.0
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
110
mJ
IAR Avalanche Current (Note 1)
-1.5
A
EAR Repetitive Avalanche Energy (Note 1)
6.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
-4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
63
W
0.51
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These P-Channel enhancement mode power FQB1P50 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB1P50 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQB1P50 is well suited for electronic lamp ballasts based on the complementary half bridge topology.




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