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FQB19N20C

Features: 19.0A, 200V, RDS(on)= 0.17 @VGS= 10 VLow gate charge ( typical 40.5 nC)Low Crss ( typical 85 pF)Fast switching100% avalanche testedImproved dv/dt capabilitySpecifications Symbol Parameter FQB19N20C / FQI19N20C Units VDSS Drain-Source Voltage 200 V ID...

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SeekIC No. : 004343094 Detail

FQB19N20C: Features: 19.0A, 200V, RDS(on)= 0.17 @VGS= 10 VLow gate charge ( typical 40.5 nC)Low Crss ( typical 85 pF)Fast switching100% avalanche testedImproved dv/dt capabilitySpecifications Symbol ...

FQB19N20C Data Sheet

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Part Number:
FQB19N20C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

19.0A, 200V, RDS(on)= 0.17 @VGS= 10 V
Low gate charge ( typical  40.5 nC)
Low Crss ( typical  85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability


Specifications

 

Symbol

Parameter

FQB19N20C / FQI19N20C

Units

VDSS

Drain-Source Voltage

200

V

ID

Drain Current

- Continuous (TC =25°C)

19.0

A

 

- Continuous (TC = 100°C)

12.1

A

IDM

Drain Current Pulsed (Note 1)

76.0

A

VGSS

Gate-Source Voltage

±30

V

EAS

Single Pulsed Avalanche Energy (Note 2)

433

mJ

IAR

Avalanche Current (Note 1)

19.0

A

EAR

Repetitive Avalanche Energy (Note 1)

13.9

mJ

d v/dt

Peak Diode Recovery dv/dt (Note 3)

5.5

V/ns

PD

Power Dissipation (TA = 25°C)

3.13

W

Power Dissipation (TC = 25°C)

139

W

- Derate above 25°C

1,11

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C




Description

These N-Channel enhancement mode power field effect transistors of FQB19N20C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB19N20C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB19N20C is well suited for high efficiency switched mode power supplies, active power factor correction




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