FQB19N20C

Features: 19.0A, 200V, RDS(on)= 0.17 @VGS= 10 VLow gate charge ( typical 40.5 nC)Low Crss ( typical 85 pF)Fast switching100% avalanche testedImproved dv/dt capabilitySpecifications Symbol Parameter FQB19N20C / FQI19N20C Units VDSS Drain-Source Voltage 200 V ID...

product image

FQB19N20C Picture
SeekIC No. : 004343094 Detail

FQB19N20C: Features: 19.0A, 200V, RDS(on)= 0.17 @VGS= 10 VLow gate charge ( typical 40.5 nC)Low Crss ( typical 85 pF)Fast switching100% avalanche testedImproved dv/dt capabilitySpecifications Symbol ...

floor Price/Ceiling Price

Part Number:
FQB19N20C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/18

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

19.0A, 200V, RDS(on)= 0.17 @VGS= 10 V
Low gate charge ( typical  40.5 nC)
Low Crss ( typical  85 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability



Specifications

 

Symbol

Parameter

FQB19N20C / FQI19N20C

Units

VDSS

Drain-Source Voltage

200

V

ID

Drain Current

- Continuous (TC =25°C)

19.0

A

 

- Continuous (TC = 100°C)

12.1

A

IDM

Drain Current Pulsed (Note 1)

76.0

A

VGSS

Gate-Source Voltage

±30

V

EAS

Single Pulsed Avalanche Energy (Note 2)

433

mJ

IAR

Avalanche Current (Note 1)

19.0

A

EAR

Repetitive Avalanche Energy (Note 1)

13.9

mJ

d v/dt

Peak Diode Recovery dv/dt (Note 3)

5.5

V/ns

PD

Power Dissipation (TA = 25°C)

3.13

W

Power Dissipation (TC = 25°C)

139

W

- Derate above 25°C

1,11

W/°C

TJ, TSTG

Operating and Storage Temperature Range

-55 to +150

°C

TL

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C




Description

These N-Channel enhancement mode power field effect transistors of FQB19N20C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB19N20C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB19N20C is well suited for high efficiency switched mode power supplies, active power factor correction




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Power Supplies - Board Mount
Optical Inspection Equipment
Crystals and Oscillators
Test Equipment
LED Products
Prototyping Products
DE1
View more