Features: 19.0A, 200V, RDS(on)= 0.17 @VGS= 10 VLow gate charge ( typical 40.5 nC)Low Crss ( typical 85 pF)Fast switching100% avalanche testedImproved dv/dt capabilitySpecifications Symbol Parameter FQB19N20C / FQI19N20C Units VDSS Drain-Source Voltage 200 V ID...
FQB19N20C: Features: 19.0A, 200V, RDS(on)= 0.17 @VGS= 10 VLow gate charge ( typical 40.5 nC)Low Crss ( typical 85 pF)Fast switching100% avalanche testedImproved dv/dt capabilitySpecifications Symbol ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Parameter |
FQB19N20C / FQI19N20C |
Units | |
VDSS |
Drain-Source Voltage |
200 |
V | |
ID |
Drain Current |
- Continuous (TC =25°C) |
19.0 |
A |
|
- Continuous (TC = 100°C) |
12.1 |
A | |
IDM |
Drain Current Pulsed (Note 1) |
76.0 |
A | |
VGSS |
Gate-Source Voltage |
±30 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
433 |
mJ | |
IAR |
Avalanche Current (Note 1) |
19.0 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
13.9 |
mJ | |
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD |
Power Dissipation (TA = 25°C) |
3.13 |
W | |
Power Dissipation (TC = 25°C) |
139 |
W | ||
- Derate above 25°C |
1,11 |
W/°C | ||
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQB19N20C are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB19N20C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB19N20C is well suited for high efficiency switched mode power supplies, active power factor correction