Features: • 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 32 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol Pa...
FQB19N10: Features: • 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V• Low gate charge ( typical 19 nC)• Low Crss ( typical 32 pF)• Fast switching• 100% avalanche tested• Impro...
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Symbol | Parameter |
FQB19N10 / FQI19N10 |
Units |
VDSS | Drain-Source Voltage |
100 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
19 |
A |
13.5 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
76 |
A |
VGSS | Gate-Source Voltage |
± 25 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
220 |
mJ |
IAR | Avalanche Current (Note 1) |
19 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
7.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
75 |
W | |
0.5 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power field effect transistors of FQB19N10 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB19N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB19N10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.