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SeekIC No. : 00160481 Detail

FQB17P10TM: MOSFET 100V P-Channel QFET

FQB17P10TM Data Sheet

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Part Number:: FQB17P10TM
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/21

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MOSFET N-CH/200V/10A/QFET
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Features: • 10A, 200V, RDS(on) = 0.36 @VGS = 10 V• Low gate charge ( typical 13 nC)...

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 100 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	- 16.5 A
Resistance Drain-Source RDS (on) :	0.19 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Transistor Polarity : P-Channel
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 16.5 A

Parameters:

Technical/Catalog Information	FQB17P10TM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	16.5A
Rds On (Max) @ Id, Vgs	190 mOhm @ 8.25A, 10V
Input Capacitance (Ciss) @ Vds	1100pF @ 25V
Power - Max	3.75W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	39nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQB17P10TM FQB17P10TM

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FQB17P10TM

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