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FQB17N08TM

MOSFET 80V N-Channel QFET Logic Level

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SeekIC No. : 00163996 Detail

FQB17N08TM: MOSFET 80V N-Channel QFET Logic Level

FQB17N08TM Data Sheet

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Part Number:
FQB17N08TM
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 16.5 A
Resistance Drain-Source RDS (on) : 0.115 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 80 V
Package / Case : TO-263
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 16.5 A
Resistance Drain-Source RDS (on) : 0.115 Ohms


Parameters:

Technical/Catalog InformationFQB17N08TM
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C16.5A
Rds On (Max) @ Id, Vgs115 mOhm @ 8.25A, 10V
Input Capacitance (Ciss) @ Vds 450pF @ 25V
Power - Max3.13W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs15nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQB17N08TM
FQB17N08TM



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