FQB17N08L

Features: • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V• Low gate charge ( typical 8.8 nC)• Low Crss ( typical 29 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature rating• Low level gate drive ...

product image

FQB17N08L Picture
SeekIC No. : 004343090 Detail

FQB17N08L: Features: • 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V• Low gate charge ( typical 8.8 nC)• Low Crss ( typical 29 pF)• Fast switching• 100% avalanche tested• Imp...

floor Price/Ceiling Price

Part Number:
FQB17N08L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 16.5A, 80V, RDS(on) = 0.1Ω @VGS = 10 V
• Low gate charge ( typical 8.8 nC)
• Low Crss ( typical 29 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
• Low level gate drive requirements allowing direct operation from logic drives



Specifications

Symbol Parameter
FQB17N08L / FQI17N08L
Units
VDSS Drain-Source Voltage
80
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
16.5
A
11.6
A
IDM Drain Current - Pulsed (Note 1)
66
A
VGSS Gate-Source Voltage
±20
V
EAS Single Pulsed Avalanche Energy (Note 2)
100
mJ
IAR Avalanche Current (Note 1)
16.5
A
EAR Repetitive Avalanche Energy (Note 1)
6.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
6.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
65
W
0.43
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB17N08L field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB17N08L is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQB17N08L is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Potentiometers, Variable Resistors
Inductors, Coils, Chokes
Boxes, Enclosures, Racks
Tapes, Adhesives
803
Resistors
View more