Features: • 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 28 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol ...
FQB17N08: Features: • 16.5A, 80V, RDS(on) = 0.115Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 28 pF)• Fast switching• 100% avalanche tested• Im...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter |
FQB17N08 / FQI17N08 |
Units |
VDSS | Drain-Source Voltage |
80 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
16.5 |
A |
11.6 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
66 |
A |
VGSS | Gate-Source Voltage |
± 25 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
100 |
mJ |
IAR | Avalanche Current (Note 1) |
16.5 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
6.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
65 |
W | |
0.43 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB17N08 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB17N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQB17N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.