Position: Home  > All Categories> Integrated Circuits (ICs) > FQB16N25C

FQB16N25C

Features: • 15.6A, 250V, RDS(on) = 0.27Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 68 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB16N25C / FQI16N25C Units V...

product image

FQB16N25C Picture
See larger image
SeekIC No. : 004343088 Detail

FQB16N25C: Features: • 15.6A, 250V, RDS(on) = 0.27Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 68 pF)• Fast switching• 100% avalanche tested• Im...

FQB16N25C Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQB16N25C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 15.6A, 250V, RDS(on) = 0.27Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 68 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB16N25C / FQI16N25C
Units
VDSS Drain-Source Voltage
250
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
15.6
A
9.8
A
IDM Drain Current - Pulsed (Note 1)
62.8
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
410
mJ
IAR Avalanche Current (Note 1)
15.6
A
EAR Repetitive Avalanche Energy (Note 1)
13.9
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
5.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
139
W
1.11
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB16N25C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB16N25C has been especially tailored to minimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalanche and commutation mode. FQB16N25C is well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
LED Products
LM24P20
KCG057QV1DB-G770
Line Protection, Backups
BX0023
A20B-1008-0550
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Tapes, Adhesives
803
AC452-2
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
RF and RFID
X3C26P1-30S
1P620S
View more