Features: • -15A, -120V, RDS(on) = 0.2 @VGS = -10 V• Low gate charge ( typical 29 nC)• Low Crss ( typical 110 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol ...
FQB15P12: Features: • -15A, -120V, RDS(on) = 0.2 @VGS = -10 V• Low gate charge ( typical 29 nC)• Low Crss ( typical 110 pF)• Fast switching• 100% avalanche tested• Improved...
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Symbol |
Parameter |
FQB15P12 / FQI15P12 |
Units | |
VDSS |
Drain-Source Voltage |
-120 |
V | |
ID |
Drain Current |
- Continuous (TC =25°C) |
-15 |
A |
- Continuous (TC = 100°C) |
-10.5 |
A | ||
IDM |
Drain Current Pulsed (Note 1) |
-60 |
A | |
VGSS |
Gate-Source Voltage |
±30 |
V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1157 |
mJ | |
IAR |
Avalanche Current (Note 1) |
-15 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
10 |
mJ | |
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
-5.0 |
V/ns | |
PD |
Power Dissipation (TA = 25°C) |
3.75 |
W | |
Power Dissipation (TC = 25°C) - Derate above 25°C |
100 |
W | ||
0.57 |
W/°C | |||
TJ, TSTG |
Operating and |
-55 to +150 |
°C | |
TL |
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These P-Channel enhancement mode power FQB15P12 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB15P12 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.