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FQB13N50

Features: • 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V• Low gate charge ( typical 45 nC).• Low Crss ( typical 25 pF).• Fast switching.• 100% avalanche tested.• Improved dv/dt capability.Specifications Symbol Parameter FQB13N50 / FQI13N50 Units ...

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SeekIC No. : 004343084 Detail

FQB13N50: Features: • 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V• Low gate charge ( typical 45 nC).• Low Crss ( typical 25 pF).• Fast switching.• 100% avalanche tested.•...

FQB13N50 Data Sheet

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Part Number:
FQB13N50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 12.5A, 500V. RDS(on) = 0.43Ω @VGS = 10 V
• Low gate charge ( typical 45 nC).
• Low Crss ( typical 25 pF).
• Fast switching.
• 100% avalanche tested.
• Improved dv/dt capability.


Specifications

Symbol Parameter
FQB13N50 / FQI13N50
Units
VDSS Drain-Source Voltage
500
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
12.5
A
7.9
A
IDM Drain Current - Pulsed (Note 1)
50
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
810
mJ
IAR Avalanche Current (Note 1)
12.5
A
EAR Repetitive Avalanche Energy (Note 1)
17
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
170
W
1.35
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors of FQB13N50 are produced using Fairchild's proprietary, planar stripe, DMOS technology.
 
This advanced technology FQB13N50 is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB13N50 is well suited for high efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on half bridge.




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