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FQB13N06L

Features: • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V• Low gate charge ( typical 4.8 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol ...

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SeekIC No. : 004343081 Detail

FQB13N06L: Features: • 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V• Low gate charge ( typical 4.8 nC)• Low Crss ( typical 17 pF)• Fast switching• 100% avalanche tested• Im...

FQB13N06L Data Sheet

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Part Number:
FQB13N06L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V
• Low gate charge ( typical 4.8 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Specifications

Symbol Parameter
FQB13N06L / FQI13N06L
Units
VDSS Drain-Source Voltage
60
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
13.6
A
9.6
A
IDM Drain Current - Pulsed (Note 1)
54.4
A
VGSS Gate-Source Voltage
±20
V
EAS Single Pulsed Avalanche Energy (Note 2)
90
mJ
IAR Avalanche Current (Note 1)
13.6
A
EAR Repetitive Avalanche Energy (Note 1)
4.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
7.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
45
W
0.3
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB13N06L field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB13N06L has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB13N06L is well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.




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