FQB13N06

Features: • 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V• Low gate charge ( typical 5.8 nC)• Low Crss ( typical 15 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol ...

product image

FQB13N06 Picture
SeekIC No. : 004343080 Detail

FQB13N06: Features: • 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V• Low gate charge ( typical 5.8 nC)• Low Crss ( typical 15 pF)• Fast switching• 100% avalanche tested• Imp...

floor Price/Ceiling Price

Part Number:
FQB13N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/18

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V
• Low gate charge ( typical 5.8 nC)
• Low Crss ( typical 15 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating



Specifications

Symbol Parameter
FQB13N06 / FQI13N06
Units
VDSS Drain-Source Voltage
60
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
13
A
9.2
A
IDM Drain Current - Pulsed (Note 1)
52
A
VGSS Gate-Source Voltage
±25
V
EAS Single Pulsed Avalanche Energy (Note 2)
85
mJ
IAR Avalanche Current (Note 1)
13
A
EAR Repetitive Avalanche Energy (Note 1)
4.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
7.0
V/ns
PD Power Dissipation (TA = 25°C) *
3.75
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
45
W
0.3
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB13N06 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB13N06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB13N06 is well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Memory Cards, Modules
Undefined Category
Motors, Solenoids, Driver Boards/Modules
Programmers, Development Systems
Tapes, Adhesives
803
View more