Position: Home  > All Categories> Integrated Circuits (ICs) > FQB12N60C

FQB12N60C

Features: • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V• Low gate charge ( typical 48 nC)• Low Crss ( typical 21 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB12N60C / FQI12N60C Units VDS...

product image

FQB12N60C Picture
See larger image
SeekIC No. : 004343077 Detail

FQB12N60C: Features: • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V• Low gate charge ( typical 48 nC)• Low Crss ( typical 21 pF)• Fast switching• 100% avalanche tested• Impr...

FQB12N60C Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQB12N60C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB12N60C / FQI12N60C
Units
VDSS Drain-Source Voltage
600
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
12
A
7.4
A
IDM Drain Current - Pulsed (Note 1)
48
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
870
mJ
IAR Avalanche Current (Note 1)
12
A
EAR Repetitive Avalanche Energy (Note 1)
22.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
225
W
1.78
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB12N60C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
 
This advanced technology FQB12N60C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB12N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
LED Products
LM24P20
KCG057QV1DB-G770
Prototyping Products
AVT4168
DE1
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Integrated Circuits (ICs)
TA8435H
1MB12-140
Discrete Semiconductor Products
T508N12TOF
MUR20040
View more