Features: • 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V• Low gate charge ( typical 39 nC)• Low Crss ( typical 25 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB12N50 / FQI12N50 Units VDS...
FQB12N50: Features: • 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V• Low gate charge ( typical 39 nC)• Low Crss ( typical 25 pF)• Fast switching• 100% avalanche tested• Im...
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Symbol | Parameter |
FQB12N50 / FQI12N50 |
Units |
VDSS | Drain-Source Voltage |
500 |
V |
ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
12.1 |
A |
7.6 |
A | ||
IDM | Drain Current - Pulsed (Note 1) |
48.4 |
A |
VGSS | Gate-Source Voltage |
± 30 |
V |
EAS | Single Pulsed Avalanche Energy (Note 2) |
878 |
mJ |
IAR | Avalanche Current (Note 1) |
12.1 |
A |
EAR | Repetitive Avalanche Energy (Note 1) |
17.9 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) |
4.5 |
V/ns |
PD | Power Dissipation (TA = 25°C) * |
3.13 |
W |
Power Dissipation (TC = 25°C) - Derate above 25°C |
179 |
W | |
1.43 |
W/°C | ||
TJ, TSTG | Operating and Storage Temperature Range |
-55to+150 |
°C |
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB12N50 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB12N50 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB12N50 is well suited for high efficiency switch mode power supplies, power factor correction, electronic lamp ballasts based on half bridge.