Position: Home  > All Categories> Integrated Circuits (ICs) > FQB11N40C

FQB11N40C

Features: • 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 85pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB11N40C / FQI11N40C Units V...

product image

FQB11N40C Picture
See larger image
SeekIC No. : 004343073 Detail

FQB11N40C: Features: • 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V• Low gate charge ( typical 28 nC)• Low Crss ( typical 85pF)• Fast switching• 100% avalanche tested• Im...

FQB11N40C Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQB11N40C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 10.5 A, 400V, RDS(on) = 0.5 Ω @VGS = 10 V
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 85pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB11N40C / FQI11N40C
Units
VDSS Drain-Source Voltage
400
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
10.5
A
6.6
A
IDM Drain Current - Pulsed (Note 1)
42
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
360
mJ
IAR Avalanche Current (Note 1)
11
A
EAR Repetitive Avalanche Energy (Note 1)
13.5
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
4.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
135
W
1.07
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB11N40C field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB11N40C has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB11N40C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
Optical Inspection Equipment
AA924
A21K4B
Tools
TCP202
G084SN05 V.3
LED Products
LM24P20
KCG057QV1DB-G770
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
View more