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FQB11N40

Features: • 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V• Low gate charge ( typical 27 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter FQB11N40 / FQI11N40 Units VDS...

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SeekIC No. : 004343072 Detail

FQB11N40: Features: • 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V• Low gate charge ( typical 27 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Im...

FQB11N40 Data Sheet

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Part Number:
FQB11N40
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 11.4A, 400V, RDS(on) = 0.48Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
FQB11N40 / FQI11N40
Units
VDSS Drain-Source Voltage
400
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
11.4
A
7.2
A
IDM Drain Current - Pulsed (Note 1)
46
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy (Note 2)
520
mJ
IAR Avalanche Current (Note 1)
11.4
A
EAR Repetitive Avalanche Energy (Note 1)
14.7
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD Power Dissipation (TA = 25°C) *
3.13
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
147
W
1.18
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+150
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQB11N40 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQB11N40 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQB11N40 is well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.




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