FQAF9P25

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-3PF
Continuous Drain Current : 7.1 A
Drain-Source Breakdown Voltage : - 250 V
Resistance Drain-Source RDS (on) : 0.62 Ohms


Features:

*-7.1A, -250V, R_DS(on) = 0.62 @V_GS  = -10 V
* Low gate charge ( typical  29 nC)
* Low Crss ( typical  27 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability  


Specifications

Symbol	Parameter	FQAF9P25	Units
VDSS	Drain-Source Voltage	-250	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	-7.1	A
		-4.5	A
IDM	Drain Current - Pulsed             (Note 1)	-28.4	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	650	mJ
IAR	Avalanche Current                   (Note 1)	-7.1	A
EAR	Repetitive Avalanche Energy         (Note 1)	7.0	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	-5.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	70	W
		0.56	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These P-Channel enhancement mode power FQAF9P25 field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
    This advanced technology FQAF9P25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF9P25 is well suited for high efficiency switching DC/DC converters and switch mode power supplies. 


Parameters:

Technical/Catalog Information	FQAF9P25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	7.1A
Rds On (Max) @ Id, Vgs	620 mOhm @ 3.55A, 10V
Input Capacitance (Ciss) @ Vds	1180pF @ 25V
Power - Max	70W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF9P25 FQAF9P25