FQAF70N10

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Resistance Drain-Source RDS (on) : 0.023 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 45 A
Package / Case : TO-3PF


Features:

* 45A, 100V, R _DS(on) = 0.023  @V_GS  = 10 V
* Low gate charge ( typical 85 nC)
* Low Crss ( typical  150 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating 


Specifications

Symbol	Parameter	FQAF70N10	Units
VDSS	Drain-Source Voltage	100	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	45	A
		31.8	A
IDM	Drain Current - Pulsed             (Note 1)	180	A
VGSS	Gate-Source Voltage	± 25	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	1300	mJ
IAR	Avalanche Current                   (Note 1)	45	A
EAR	Repetitive Avalanche Energy         (Note 1)	10	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	6.0	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	100	W
		0.67	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQAF70N10 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
    This advanced technology FQAF70N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF70N10 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.