FQAF6N70

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 700 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Package / Case : TO-3PF
Continuous Drain Current : 4.74 A


Features:

* 4.74A, 700V, R_DS(on)  = 1.5  @V_GS  = 10 V
* Low gate charge ( typical 30 nC)
* Low Crss ( typical  15 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol	Parameter	FQAF6N70	Units
VDSS	Drain-Source Voltage	700	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	4.74	A
		3.0	A
IDM	Drain Current - Pulsed             (Note 1)	19	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	600	mJ
IAR	Avalanche Current                   (Note 1)	4.74	A
EAR	Repetitive Avalanche Energy         (Note 1)	8.3	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	83	W
		0.87	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQAF6N70 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

    This advanced technology FQAF6N70 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQAF6N70 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.