Position: Home  > All Categories> Integrated Circuits (ICs) > FQAF65N0

FQAF65N0

Features: * 49A, 60V, RDS(on) = 0.016 @VGS = 10 V * Low gate charge ( typical 48 nC)* Low Crss ( typical 100 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capability* 175°C maximum junction temperature ratingSpecifications Symbol Parameter FQAF65N06 Units VDSS Drain...

product image

FQAF65N0 Picture
See larger image
SeekIC No. : 004343068 Detail

FQAF65N0: Features: * 49A, 60V, RDS(on) = 0.016 @VGS = 10 V * Low gate charge ( typical 48 nC)* Low Crss ( typical 100 pF)* Fast switching* 100% avalanche tested* Improved dv/dt capability* 175°C maximum junc...

FQAF65N0 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FQAF65N0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

* 49A, 60V, RDS(on)  = 0.016 @V GS = 10 V
* Low gate charge ( typical 48 nC)
* Low Crss ( typical  100 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating


Specifications

Symbol Parameter
FQAF65N06
Units
VDSS Drain-Source Voltage
60
V
ID Drain Current         - Continuous (TC = 25°C)
                             - Continuous (TC = 100°C)
100
A
71
A
IDM Drain Current - Pulsed                 (Note 1)
350
A
VGSS Gate-Source Voltage
± 25
V
EAS Single Pulsed Avalanche Energy          (Note 2)
815
mJ
IAR Avalanche Current                               (Note 1)
100
A
EAR Repetitive Avalanche Energy                (Note 1)
21.4
mJ
dv/dt Peak Diode Recovery dv/dt                  (Note 3)
7.0
V/ns
PD Power Dissipation     (TC = 25°C)
                             - Derate above 25°C
214
W
1.43
W/C
TJ,TSTG Operating and Storage Temperature Range
-55 to+175
TL Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

    These N-Channel enhancement mode power FQAF65N0 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.

     This advanced technology FQAF65N0 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF65N0 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tools
TCP202
G084SN05 V.3
Audio Products
HUC1002
WM-64CT
Circuit Protection
A50QS75-4Y
F-17*77
Integrated Circuits (ICs)
TA8435H
1MB12-140
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
View more